mur140 & MUR160 document number 88684 22-jul-05 vishay general semiconductor www.vishay.com 1 do-204ac (do-15) new product ultrafast plastic rectifier major ratings and characteristics features ? glass passivated chip junction ultrafast reverse recovery time i f(av) 1.0 a v rrm 400 v, 600 v i fsm 35 a t rr 50 ns v f 1.05 v t j max. 175 c low forward voltage drop low leakage current low switching losse s, high efficiency high forward surge capability solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer and telecommuni- cation mechanical data case: do-204ac (do-15) epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol mur140 MUR160 unit maximum repetitive peak reverse voltage v rrm 400 600 v working peak reverse voltage v rwm 400 600 v maximum dc blocking voltage v dc 400 600 v maximum average forward rectified current at t a = 120 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 35 a operating junction and storage temperature range t j , t stg - 65 to + 175 c c
www.vishay.com 2 document number 88684 22-jul-05 mur140 & MUR160 vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, duty cycle 2 % thermal characteristics t a = 25 c unless otherwise specified notes: (1) lead length = 3/8" on p.c. board with 1.5" x 1.5" copper surface ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol mur140 MUR160 unit maximum instantaneous forward voltage (1) at i f = 1.0 a at i f = 1.0 a t j = 25 c t j = 150 c v f 1.25 1.05 v maximum instantaneous reverse current at rated dc blocking voltage (1) t j = 25 c t j = 150 c i r 5.0 150 a maximum reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns maximum reverse recovery time at i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 10 % i rm t rr 75 ns maximum forward recovery time at i f = 1.0 a, di/dt = 100 a/s, recovery to 1.0 v t fr 50 ns parameter symbol mur140 MUR160 unit typical thermal resistance junction to ambient (1) r ja 50 c/w figure 1. forward current derating curve 0 2.0 3.0 0 25 50 75 100 125 150 175 average forward rectified current (a) ambient temperature (c) 1.0 pcb with 1.5" x 1.5" copper pads l = 3/8" figure 2. maximum non-repetitive peak forward surge current 0 10 20 30 40 50 1 100 10 peak forward surge current (a) number of cycles at 50 h z
mur140 & MUR160 document number 88684 22-jul-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics 0.01 0.1 1 10 100 0.2 0.4 0.6 0. 8 11.21.41.61. 8 t j = 150 c tj = 175 c tj = 25 c instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0.01 0.1 1 10 100 1000 0204060 8 0100 instan taneo u s re v erse leakage c u rrent a tj = 175 c tj = 150 c tj = 25 c percent of peak re v erse v oltage ( % ) figure 5. typical junction capacitance re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 1 1 10 10 100 100 t j = 25 c f = 1.0 mhz v sig = 50m v p-p 0.034 (0.86) 0.028 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 0.230 (5.8) 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. do-204ac (do-15)
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